Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator
Author:
Affiliation:
1. Aristotle University of Thessaloniki
2. Aristotele University of Thessaloniki
3. Technical University of Berlin
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.264-268.445.pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer;Thin Solid Films;2005-07
2. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI;Materials Science Forum;2002-04
3. Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator;Journal of The Electrochemical Society;2001
4. SOL Thinning Effects on 3C-SiC on SOI*;Materials Science Forum;2000-05
5. Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System;Materials Science Forum;2000-05
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