Silicon Surface Defects: The Roles of Passivation and Surface Contamination-Reference-Cited by-同舟云学术

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Silicon Surface Defects: The Roles of Passivation and Surface Contamination

Published:1997-12 Issue: Volume:258-263 Page:1719-1724
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Reddy Anand J.,Burr Tracey A.,Chan Julia K.,Norga Gerd J.,Michel Jürgen,Kimerling Lionel C.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.258-263.1719.pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Investigation of the Structure and Coverage of the Si(111)−OCH3 Surface;The Journal of Physical Chemistry B;2006-04-01

2. Infrared and X-ray Photoelectron Spectroscopic Studies of the Reactions of Hydrogen-Terminated Crystalline Si(111) and Si(100) Surfaces with Br2, I2, and Ferrocenium in Alcohol Solvents;The Journal of Physical Chemistry B;2002-03-15

3. Effects of Interfacial Energetics on the Effective Surface Recombination Velocity of Si/Liquid Contacts;The Journal of Physical Chemistry B;2002-02-22

4. Observation of two coupled defect levels on the hydrogen-passivated Si (100) surface;Physica B: Condensed Matter;2001-12

5. Frontiers of research in photoelectrochemical solar energy conversion;Journal of Electroanalytical Chemistry;2001-07

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