Zeeman Study of the 0.9 eV Emission in AlN and GaN-Reference-Cited by-同舟云学术

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Zeeman Study of the 0.9 eV Emission in AlN and GaN

Published:1997-12 Issue: Volume:258-263 Page:1131-1136
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Thurian P.,Loa I.,Maxim P.,Pressel Klaus¹,Hoffmann Andreas²,Thomsen C.

Affiliation:

1. Institute for Semiconductor Physics

2. PLANSEE Metal GmbH

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.258-263.1131.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of the6885‐cm−1luminescence lines in ZnO: Vanadium versus copper;Physical Review B;2005-03-18

2. Transition metal defects in group-III nitrides: Anab initiocalculation of hyperfine interactions and optical transitions;Physical Review B;2001-01-31

3. Electron paramagnetic resonance ofCu(d9)in GaN;Physical Review B;2000-11-15

4. Optically detected electron paramagnetic resonance of AlN single crystals;Physical Review B;1999-01-15

5. aluminum nitride (AlN), impurities and defects;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

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