Radiotracer Identification of Ti, V and Cr Band Gap States in 4H- and 6H-SiC
Author:
Affiliation:
1. Fraunhofer-Institut für Integrierte Schaltungen IIS-A
2. Paul Scherrer Institut
3. Friedrich Schiller Universität Jena
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.264-268.541.pdf
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy;2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS);2019-11
2. Fundamental Aspects of SiC;Materials Science and Technology;2013-02-15
3. Electronic structure and magnetic properties of transition-metal-doped3Cand4Hsilicon carbide;Physical Review B;2006-12-28
4. Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes;Materials Science Forum;2006-10
5. DEEP LEVEL DEFECTS IN SILICON CARBIDE;International Journal of High Speed Electronics and Systems;2006-09
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