4kV Silicon Carbide MOSFETs-Reference-Cited by-同舟云学术

4kV Silicon Carbide MOSFETs

Published:2011-03 Issue: Volume:679-680 Page:637-640
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Stum Zachary¹,Bolotnikov A.V.¹,Losee Peter A.¹,Matocha Kevin²,Arthur Steve¹,Nasadoski Jeff¹,Rao R. Ramakrishna¹,Saadeh O.S.¹,Stevanovic Ljubisa¹,Myers-Ward Rachael L.³,Eddy Charles R.³,Gaskill D. Kurt³

Affiliation:

1. General Electric Global Research Center

2. General Electric Global Research

3. U.S. Naval Research Laboratory

Abstract

Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 17 mΩ-cm2 with a blocking voltage of 3.3kV. Analysis is presented of the on-resistance and temperature dependence (up to 175°C), as well as switching performance. Switching tests taken at 1000V and 6A showed turn-on and turn-off transients of approximately 20-40ns.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.679-680.637.pdf

Reference6 articles.

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3. P. Losee, et al., IEEE Trans. Elect. Dev. 55, 1824-1829 (2008).

4. R. Severns, MOS Power Applications Handbook, Sta. Clara, CA: Siliconix (1984).

5. D. Peters, et al., Proc. Of EPE Conf. (2003).

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