Affiliation:
1. Fraunhofer Institute for Solar Energy Systems (ISE)
Abstract
The new MOSFET-generation with SiC-materials seems well suited for power electronic
converters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters,
which transfer the DC power of the solar panel to the AC grid. Their high switching speed and low
on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the
costs and weight of the converters. This paper shows a comparison between IGBT and SiC
DMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples made
by CREE®.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
13 articles.
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