Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT

Author:

Schmitt Erwin1,Straubinger Thomas L.1,Rasp Michael1,Vogel Michael1,Wohlfart Andreas1

Affiliation:

1. SiCrystal AG

Abstract

We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the entire process. The investigations were accompanied by studies on the formation of basal plane dislocations and their role as source for stacking faults. Several methods for the evaluation of material properties were applied to determine quality most precisely, e.g. KOH-defect-etching, optical microscopy, electron microscopy and X-ray-diffraction. We found out that several influences in growth conditions have to be controlled in a proper manner to achieve defect reduction. Based on these investigations we were able to improve our process and the crystal quality significantly. Best values for 3” 4H wafers show that EPD = 5x103 cm-2 , MPD < 0.1 cm-2 and FWHM-values < 15 arcsec can be achieved.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Status of 3" 6H SiC Bulk Crystal Growth;Materials Science Forum;2010-04

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