Study of the Growth Temperature Measurement and Control for Silicon Carbide Crystal

Abstract

The heating temperature of the silicon carbide sublimation growth crucible is changed by adjusting the output power of the medium frequency induction coil, and the sintering experiments were carried out using NaCl and Al2O3 to observe the morphological changes after sintered under different output power, the corresponding temperature was determined, and the corresponding relationship between the output power and the heating temperature was obtained, the precise temperature control was realized. The results of temperature measurement were compared with that of the infrared photoelectric pyrometer. Based on this, the SiC grains were prepared according to the temperature measurement results. The Raman spectroscopy result shows that the SiC polytype was 6H, the SiC grains distributions are homogeneous, and the size of the SiC grains is uniform and dense.