UV Nonvolatile Sensor Using SANOS Capacitor Device-Reference-Cited by-同舟云学术

UV Nonvolatile Sensor Using SANOS Capacitor Device

Published:2020-02 Issue: Volume:977 Page:250-255
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hsieh Wen Ching¹,Tseng Wei Ting²,Jong Fuh Cheng³,Lee Hao Tien Daniel⁴

Affiliation:

1. Minghsin Universuty of Science and Technology

2. Minghsin University of Science and Technology

3. Southern Taiwan University of Science and Technology

4. ETOMS Electronics Corp

Abstract

The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant increase of threshold voltage VT. The changes of VT for SANOS after UV radiation have a correlation to the UV TD as well. In this paper, the performance for capacitor types of SANOS UV TD nonvolatile sensor were discussed in detailed. The SANOS capacitor device in this study has demonstrated the better feasibility for UV TD nonvolatile sensor application.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.977.250.pdf

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