Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis-Reference-Cited by-同舟云学术

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Published:2019-07 Issue: Volume:963 Page:788-791
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Cavallaro Daniela¹^ORCID,Pulvirenti Mario¹^ORCID,Zanetti Edoardo¹,Saggio Mario Giuseppe¹

Affiliation:

1. STMicroelectronics

Abstract

The aim of this paper is to analyze the SiC MOSFETs behavior under short circuit tests (SCT). In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.963.788.pdf

Reference6 articles.

1. Y. Shi, at al., Switching Characterization and Short-Circuit Protection of 1200 V SiC MOSFET T-Type Module in PV Inverter Application, IEEE Trans. on Ind. Elec., vol. 64, no. 11, pp.: 9135-9143, Nov. (2017).

2. S. Panarello, et al. Improving ICs reliability with high speed thermal mapping, Integration, the VLSI Journal (2018), (in press).

3. G. Romano, at al., A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs, IEEE J. Em. and Sel. Top. In Power Elec., vol. 4, no. 3, pp.978-986.

4. L.Ceccarelli at al., Compact Electro-Thermal Modeling of a SiC MOSFET Power Module under Short-Circuit Conditions, IECON 2017, pp: 4879-4884.

5. A. Castellazzi et al., A physics-based compact model of SiC power MOSFETs, IEEE Transactions on Power Electronics -Jan (2015).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions;Microelectronics Reliability;2023-09

2. Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress;Microelectronics Reliability;2022-11

3. VDS and VGS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode;Energies;2021-11-29

4. Circuit-Based Electrothermal Simulation of Multicellular SiC Power MOSFETs Using FANTASTIC;Energies;2020-09-03