Affiliation:
1. Dynex Semiconductor Ltd
Abstract
In this work we have studied the influence of design and process variations on electrical performance of 1.7 kV 4H-SiC Schottky diodes. Diodes with two variations in their active region design namely, stripe design and segment design, were fabricated in this study. Field Limiting Rings (FLRs) or Junction Termination Extension (JTE) were used as edge termination design to achieve a blocking voltage of 1.7 kV. In addition to these designs an extra processing step of nitrous oxide (N2O) annealing was performed on some of the diodes. The study has shown that there is no extra beneficial effect of nitrous oxide annealing on device characteristics.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. J.B. Casady, and R.W. Johnson, Solid-State Electronics 39, 1409 (1996).
2. Y.K. Sharma, Advanced SiC/Oxide Interface Passivation, New Research on Silicon-Structure, Properties, Technology (InTech, 2017).
3. L. Kranz, R. A Minamisawa, et. al, PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 658 (2017).
4. H. Jiang, J. Wei, X. Dai et al., Power Semiconductor Devices and IC's (ISPSD),29th International Symposium on 49-52 (2017).
5. Y. Xu, C. Xu, G. Liu et al, Journal of Applied Physics 118(23), 235303 (2015).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules;Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications;2018-09-12