Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

Author:

Kobori Hiromi1,Kitamura Tohru1,Taniguchi Toshifumi2,Shimizu Tetsuo3

Affiliation:

1. Konan University

2. Osaka University

3. National Institute of Advanced Industrial Science and Technology

Abstract

We have studied the strong hole self-doping into LaMnO3(LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O2gas atmosphere. We consider that the excess of O2-ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O2-ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O2gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

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3. J. B. Goodenough, Phys. Rev., Vol. 100 (1955), p.564.

4. Y. Tokura: Colossal magnetoresistive oxides (Gordon and Breach Science Publishers, Amsterdam, The Netherlands 2000), p.1.

5. M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys., Vol. 70 (1998), p.39.

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