Preparation and Characterization of High Mobility Nb-Doped SnO2 Transparent Conducting Films
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Published:2020-05
Issue:
Volume:993
Page:869-875
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
He Lin An1, Luan Cai Na1, Wang Di1, Le Yong1, Ma Jin1
Abstract
Metal organic chemical vapor deposition (MOCVD) was employed for the preparation of niobium (Nb)-doped SnO2 films on SiO2 glass substrates. The structure, optical and electrical properties of the Nb-doped SnO2 films were systemically studied. The X-ray diffraction results indicated that the polycrystalline rutile SnO2 films were obtained with a preferred SnO2 [110] growth direction. Among which, the 5.4 at.% Nb-doped SnO2 film showed the lowest resistivity of 1.0×10-3 Ω∙cm and the highest Hall mobility of 74 cm2∙V-1∙s-1. The average visible light transmittance of the 5.4 at.% Nb-doped SnO2 sample was more than 79%. The obtained Nb-doped SnO2 films exhibited low resistivity, high Hall mobility and good transparency, which might have wide applications in electric and photoelectric devices.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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2 articles.
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