Abstract
We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference28 articles.
1. D. Birtalan and W. Nunley, Optoelectronics: Infrared-Visible-Ultraviolet Devices and Applications, CRC Press, pp.231-263 (2009).
2. K. Mukae, K. Tsuda, and I. Nagasawa, J. Appl. Phys. 50 (1979) 4475.
3. T. Yamamoto, T. Shiosaki, and A. Kawabata, J. Appl. Phys. 51 (1980) 3113.
4. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
5. A. Nahhas and H. K. K. Blachere, Appl. Phys. Lett. 78 (2001) 1511.