Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings-Reference-Cited by-同舟云学术

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Published:2014-02 Issue: Volume:778-780 Page:1089-1095
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Cheng Lin¹,Palmour John W.¹,Agarwal Anant K.²,Allen Scott T.³,Brunt Edward V.¹,Wang Gang Yao³,Pala Vipindas¹,Sung Woong Je⁴,Huang Alex Q.⁴,O'Loughlin Michael J.¹,Burk Albert A.⁵,Grider David E.¹,Scozzie Charles⁶

Affiliation:

1. Cree, Incorporation

2. US Department of Energy

3. Cree Inc.

4. North Carolina State University

5. Cree, Inc.

6. U.S. Army Research Laboratory

Abstract

Advanced high-voltage (≥10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, traction control, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV-20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.1089.pdf

Reference11 articles.

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2. J. W. Palmour et al., Proceedings of IPEC 2010, p.1006, (2010).

3. L. Cheng, Proceedings of ISPSD 2013, Kanazawa, Japan, May 26-30, (2013).

4. G-Y Wang, Ph.D. Thesis, FREEDM Center, Dept. EE, NC State University, Dec. (2013).

5. W. Sung et al., Proceedings of ISPSD 2008, p.271, Orlando, FL, USA, May 18 – 22, (2008).

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