Affiliation:
1. Yokohama National Unversity
2. Yokohama National University
3. National Institute of Advanced Industrial Science and Technology (AIST)
Abstract
A SiC dry etching reactor using chlorine trifluoride (ClF3) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF3 gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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