10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Abstract

We present our recent results on of 10 × 100 mm 4H-SiC epitaxy by a warm-wall planetary reactor at a growth rate of 10 μm/h. The epilayers grown by this high-throughput reactor show specular surfaces and good uniformities of thickness and doping. The intra-wafer and wafer-to-wafer thickness uniformities are 2.0% and 0.5%, respectively, while intra-wafer and wafer-to-wafer doping uniformities are 14.0% and 3.4%, respectively. The obtained surface RMS roughness is 0.2 nm. These results suggest that this 10 × 100 mm warm-wall planetary reactor provides very promising prospect on the mass production of 4H-SiC epilayers, which will further promote the development of SiC-based electronic devices.