EBIC Investigations of Deformation Induced Defects in Si

Abstract

Calculation of relation between the EBIC contrast and the recombination strength for dislocations and quasi-two-dimensional dislocation trails has been carried out taking into account the real values of depletion region width. Using the relations obtained the linear defect density along dislocations and sheet density in dislocation trails are estimated. The results of EBIC investigations of dislocations and dislocation trails in plastically deformed n- and p-Si are analyzed.