Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist
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Published:2012-04
Issue:
Volume:187
Page:97-100
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Tsvetanova Diana1, Vos Rita1, Vanstreels K.1, Radisic D.1, Sonnemans R.2, Berry III Ivan2, Waldfried Carlo2, Mattson David2, de Luca J.2, Vereecke Guy1, Mertens Paul W.1, Parac-Vogt T.N.3, Heyns Marc M.4
Affiliation:
1. IMEC Interuniversity Microelectronics Center 2. Axcelis Technologies, Inc. 3. K.U. Leuven 4. IMEC
Abstract
The removal of ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo regions is considered as one of the most challenging front-end-of-line (FEOL) processing steps for 32nm and beyond CMOS technology nodes. Commonly used resist strip processes such as fluorine-based dry plasma ash and hot sulfuric/peroxide mixtures induce unacceptable levels of oxidation and material loss [1-.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference8 articles.
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