Thin SiGe Relaxed Buffer for Strain Adjustment

Abstract

Strain adjustment is obtained by virtual substrates which are composed of a silicon substrate and a strain relaxed buffer. The basics of strain relaxation are explained and applied to the covalent bonded Si/Ge system which shows a large regime of metastability. A solution to ultrathin strain relaxed buffers is given by the injection of point defects which nucleate to dislocation loops in the interface. Principle and injection mechanism are shown.