Affiliation:
1. Polish Academy of Sciences
2. Institute of Electron Technology
3. Institute of Physics, PAS
Abstract
Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016 cm-2, energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference8 articles.
1. N.G. Rudawski, K.S. Jones, R. Gwilliam, Mater. Sci. Engineering R 61 (2008) 40.
2. A. Misiuk, A. Barcz, B. Surma, J. Bak-Misiuk, A. Wnuk, Opto-Electronics Rev. 12 (2004) 383.
3. A. Misiuk, B. Surma, A. Barcz, K. Orlinska, J. Bak-Misiuk, I.V. Antonova, S. Dub, Mater. Sci. Engineering B 124-125 (2005) 174.
4. J. Bak-Misiuk, E. Dynowska, P. Romanowski, A. Shalimov, A. Misiuk, S. Kret, P. Dluzewski, J. Domagala, W. Caliebe, J. Dabrowski, M. Prujszczyk, Solid State Phen. 131-133 (2008) 327.
5. A. Misiuk, B. Surma, J. Bak-Misiuk, Solid State Phen. 108-109 (2005) 351.