Abstract
Resistance-switching behaviors of the Pr0.7Ca0.3MnO3(PCMO) films based metalinsulator-
metal (MIM) devices has been investigated. In this work, resistance change of PCMO
films deposited with SRO buffer layers by using RF-magnetron sputtering system investigated at
room temperature. The ratio of the resistance change of the PCMO films with SRO buffer layers
in the high-resistance state to that in the low-resistance state turned out to be much lager than that
of the PCMO films without SRO buffer layers. Moreover, The reproducible property of the
fabricated samples were improved. Origin of resistance change is not clear, but PCMO films with
SRO buffer layers have the possibility of application for nonvolatile memory device.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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