Si Wafer Bonding: Structural Features of the Interface-Reference-Cited by-同舟云学术

Si Wafer Bonding: Structural Features of the Interface

Published:2009-10 Issue: Volume:156-158 Page:85-90
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Vdovin V.I.¹,Zakharov N.D.²,Pippel Eckhard²,Werner P.³,Milvidskii M.G.⁴,Ries M.⁵,Seacrist M.⁵,Falster Robert J.⁶

Affiliation:

1. Institute for Chemical Problems of Microelectronics

2. Max-Planck-Institut für Mikrostrukturphysik

3. Max Planck Institute of Microstructure Physics

4. Open-Joint-Stock Company “GIREDMET”

5. MEMC Electronic Materials, Inc.

6. MEMC Electronic Materials Inc.

Abstract

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.156-158.85.pdf

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