Affiliation:
1. Toyota Technological Institute
Abstract
In a previous study, an aluminum nitride (AlN) layer was formed below the melting point
of aluminum (Al) on the surface of an Al substrate (JIS-A1050) in a barrel with
alumina/aluminum-magnesium alloy powder which activates the substrate in the nitrogen
atmosphere. In this study, the mechanism of formation of AlN in the barrel was examined. AlN
formation requires an incubation period. During the incubation period, a white region on the surface
is observed by the optical microscopy. The Electron Probe Micro Analyzer (EPMA) show that this
region contains magnesium (Mg). It seems that Mg penetrates and diffuses from the filled Al-Mg
powder in the barrel. After that, the nitride is partially generated at the surface of the Al substrate,
and it grows with the substrate surface. The AlN layer thickness increases proportionally with the
square root of time, and it has good adhesion.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
4 articles.
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