Affiliation:
1. Université de Strasbourg and CNRS
2. Université Aix-Marseille
Abstract
We report on the electronic properties of Fe and Cr in n-type germanium using conventional and Laplace DLTS techniques, which in the case of Schottky barriers, are restricted to levels located in the upper half of the band gap. In this work we present extensive DLTS and Laplace DLTS results, re-examining various basic properties of Fe and Cr in n-type Ge samples. In addition our analysis bring new insights into the microscopic behavior of these two chemical species such as their interactions with hydrogen present as an unwanted contaminant, giving rise to the generation of other related levels in the band gap.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference11 articles.
1. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic, London, (1992).
2. P. Clauws, J. Van Gheluwe, J. Lauwaert, E. Simoen, J. Vanhellemont, M. Meuris, and A. Theuwis, Physica B 401-402 (2007) 188.
3. P. Clauws and E. Simoen, Mater. Sci. Semicond. Process. 9 (2006) 546.
4. E. Simoen, C. Claeys, Metals in Germanium, in: C. Claeys, E. Simoen, Germanium-Based Technologies: From Materials to Devices, Elsevier Ltd, London, 2007, pp.131-187.
5. S. Forment, J. Vanhellemont, P. Clauws, J. Van Steenbergen, S. Sioncke, M. Meuris, E. Simoen, and A. Theuwis, Mater. Sci. Semicond. Process. 9 (2006) 559.