Affiliation:
1. Kumamoto National College of Technology
2. Kumamoto University
3. JAXA: Japan Aerospace Exploration Agency
4. IMEC Interuniversity Microelectronics Center
Abstract
The degradation and recovery behavior of device performance on GaAlAs LEDs (Light
emitting diodes) irradiated by 2-MeV electrons and 70-MeV protons are investigated. The reverse
current increases after irradiation, while the capacitance decreases. The device performance
degradation is proportional with fluence. For electron irradiation, fluence rate is also effective for
degradation. Low fluence rate shows more large degradation compared to high fluence rate
resulting from heat impact in bulk. DLTS measurement reveals the DX center in epitaxial substrate,
and this spectrum increases with fluence. The radiation damage of proton is larger than that of
electron irradiation, which is caused by the difference of mass and possibility of nuclear collision
for the formation of lattice defects. After irradiation, the device performance recovers by thermal
annealing.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics