Manganese-Doped CdGeAs2, ZnGeAs2 and ZnSiAs2 Chalcopyrites: A New Advanced Materials for Spintronics
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Published:2010-12
Issue:
Volume:168-169
Page:31-34
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Morozov A.S.1, Koroleva L.A.1, Zashchirinskii D.M.1, Khapaeva T.M.1, Marenkin S.F.2, Fedorchenko I.V.2, Szymczak R.A.3, Krzymanska B.3
Affiliation:
1. M.V. Lomonosov Moscow State University 2. Russian Academy of Sciences 3. Polish Academy of Sciences
Abstract
Based on the Mn-doped chalcopyrites CdGeAs2, ZnGeAs2 and ZnSiAs2, new dilute magnetic semiconductors with the p-type conductivity were produced. Magnetization, electrical resistivity and Hall effect of these compositions were studied. Their temperature dependences of magnetization are similar in form in spite of a complicated character, which is controlled by the concentration and mobility of the charge carriers. Thus, for T < 15 K, these curves are characteristic of superparamagnets and for T > 15 K, of a frustrated ferromagnet. In compounds with Zn these two states are diluted by a spinglass-like state. This specific feature is ascribed to attraction of Mn ions occupying neighboring sites and to competition between the carrier-mediated exchange and superexchange interactions. The Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the AIIBIVCV2:Mn systems.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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