Structural and Band-Edge Properties of Cu(AlxIn1-X)S2 (0≤x≤1) Series Chalcopyrite Semiconductors

Abstract

We have demonstrated structural and electronic properties of a series solar energy crystals Cu(AlxIn1-x)S2 (0<=x<=1) by using measurement techniques of X-ray diffraction, polarized thermoreflectance (PTR), and X-ray photoelectron spectroscopy (XPS). Single crystals of Cu(AlxIn1-x)S2 (0<=x<=1) (0 and E ^ polarizations. The PTR spectra clearly showed that the energy value of D increases with the increase of Al content x in the Cu(AlxIn1-x)S2 (0<=x<=1) series due to the enhanced strain in the lattice. The composition-dependent crystal-field-splitting energies can be evaluated and determined to be D(x)= (10±2)+( 139±5)×x meV. Based on the experimental analyses, the crystal structure and valence-band structure of the Cu(AlxIn1-x)S2 (0<=x<=1) (0<=x<=1) series are thus realized.