Device Characteristics of Nanoscale Metal/Insulator Tunnel Transistors in the Ballistic Quantum Transport Regime
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Published:2007-03
Issue:
Volume:121-123
Page:525-528
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Affiliation:
1. Information and Communications University (ICU)
Abstract
The device characteristics of the nanoscale metal/insulator tunnel transistor are
investigated by solving the ballistic quantum transport equation in the device. The device
performance in terms of the transfer characteristics, the drain output, and the threshold voltage change
is assessed as the channel length is gradually reduced down to a few nanometer. We have found that
the device characteristics remain almost the same if the channel length is reduced to around 10
nanometer, but below it, the device performance becomes drastically degraded. Effects of other
device parameters such as the channel depth, tunnel barrier height, and the gate dielectric constant are
also discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics