Abstract
Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness
of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a
bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics
bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics
condition of the bonding interface at different temperatures and discuss the optimum procession of
the wafer capsulation.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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