Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon
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Published:2011-08
Issue:
Volume:178-179
Page:154-157
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Yarykin Nikolai1,
Weber Jörg2
Affiliation:
1. Russian Academy of Sciences
2. Technische Universität Dresden
Abstract
Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350 K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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