FeNi-Based Film Nanostructures for High Frequency Applications: Design and Characterization

Author:

Kurlyandskaya G.V.1,Bhagat S.M.2,Svalov Andrey V.3,Fernandez Eduardo4,García-Arribas Alfredo4,Barandiarán José M.5

Affiliation:

1. Ural State University

2. University of Maryland

3. Ural State University Named after A.M.Gorky

4. University of The Basque Country UPV-EHU

5. University of the Basque Country (UPV/EHU)

Abstract

FeNi films were deposited by DC magnetron sputtering at different Ar pressures. The structure and magnetic properties of the FeNi films are affected by the Ar pressure. Ferromagnetic resonance (FMR) measurements were done at a frequency of about 8.85 GHz. Both the value of resonance field and resonance line width show strong dependence on the Ar pressure: the lowest value of the resonance field and the narrowest resonance width correspond to the smallest argon pressure. Increase of the Ar pressure causes the films to have a significant perpendicular anisotropy with the easy axis pointing out of the plane. The magnetic properties and FMR were also studied for the [FeNi(170 nm)/Ti]n/FeNi(170 nm) (n = 1, 2, 5) structures prepared at the smallest Ar pressure. The FMR studies showed that the obtained multilayers are very robust: the value of the resonance field and resonance line width of the [FeNi/Ti]n/FeNi multilayers are very close to the corresponding values for the FeNi films.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

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