Phase Transition on Surface of IV Group Semiconductors by Laser Radiation-Reference-Cited by-同舟云学术

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Phase Transition on Surface of IV Group Semiconductors by Laser Radiation

Published:2005-12 Issue: Volume:108-109 Page:345-350
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Medvid Arthur¹,Onufrijevs Pavels¹,Grabovskis Dainis,Mychko Aleksandrs,Snitka Valentinas,Lytvyn Petr M.²,Plaushinaitiene Valentina

Affiliation:

1. Riga Technical University

2. National Academy of Sciences of Ukraine

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.108-109.345.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron field emission from the Si nanostructures formed by laser irradiation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-03

2. Laser-induced self-organization of nano-wires on SiO2/Si interface;Microelectronics Journal;2009-03

3. Laser Induced Self-Organization of Nanohills/Nanowires in SiO2/Si Interface;Acta Physica Polonica A;2008-03

4. Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation;Solid State Phenomena;2007-10

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