Crystallographic and Magnetic Properties of Sm2Fe17N3 Films Grown by RF Magnetron Sputtering

Abstract

Sm2Fe17Nx film magnets were prepared using a Sm2Fe17 target in a N2 gas atmosphere using a RF magnetron sputtering technique. The effect of nitrogenation treatment such as N2 gas pressure during sputtering, film heating temperature, N2 gas rate, and the effect of film thickness on the microstructure and magnetic properties of Sm2Fe17Nx films were studied. Optimized magnetic properties with film thickness 270Å, N2 gas rate 10 % and heating temperature 530°C could be obtained. In-plane anisotropy, which was the basic goal in this study, was achieved by controlling the nitrogenation parameters.