Electrical Properties of Polycrystalline α-HgI2 Detector

Abstract

Potentially low cost and large-area polycrystalline mercuric iodide (α-HgI2) is one of the preferred materials for the fabrication of room temperature X-ray and gamma-ray detectors. In this paper, polycrystalline α-HgI2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum were used to characterization the HgI2 films obtained, and I-V characteristics was also tested. Using the polycrystalline α-HgI2 films, we get the detector. According to the detector, on the one hand, a dark current test is made by using KEITHL EY 485 picoammeter; on the other hand, the Agilent 4294A precision impedance analyzer is taken to test the characteristic curve of its capacitor frequency.