Abstract
This paper presents a physical-based model for accumulation PMOS capacitor based on strained-Si/SiGe material. With this model, the physical mechanism of the “plateau”, observed in accumulation region of the C-V characteristics of the strained-Si(SSi)/SiGe PMOS capacitor, is studied. The results from the model show excellent agreement with the experimental data. The proposed model can provide valuable reference to the strained-Si device design and has been implemented in the software for extracting the parameter of strained-Si MOSFET.
Publisher
Trans Tech Publications, Ltd.
Reference8 articles.
1. S.S. Qin, H.M. Zhang, H.Y. Hu, X.Y. Dai, R.X. Xuan and B. Shu: Chin. Phys. B Vol. 19 (2010), p.117309.
2. T. F. Wu, H.M. Zhang, G.Y. Wang and H.Y. Hu: Acta Phys. Sin. Vol. 60 (2011), p.027305 (in Chinese).
3. S. Flachowsky, A. Wei, R. Illgen andT. Herrmann: IEEE Trans. Electron. Dev Vol. 57 (2010), p.1343.
4. J.Y. Wei, S. Maikap, M.H. Lee, C.C. Lee and C.W. Liu: Solid State Electron Vol. 50 (2006), p.109.
5. N. Kelaldis, D. Skarlatos and C. Tsamis: Phys. Status. Soldi. C Vol. 5 (2008), p.3647.