Affiliation:
1. Russian Academy of Sciences
Abstract
The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known two-shaping elements (TSE) method was used to produce the material. Pilot tests show that this composite material can be used for production of solar cells. The structure of silicon grains is elongated relative to the growth direction, the dislocation density in grains is of about (5÷8) ×104 cm-2, the average lifetime of minority carriers is 4÷6 µs.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference10 articles.
1. S. Brantov, B. Epelbaum, V. Tatarchenko: J. Crystal Growth Vol. 82 (1/2) (1987), p.122.
2. S. Brantov, K. Filonov, B. Epelbaum, L. Miheeva, A. Sitnikov: J. Crystal Growth Vol. 104 (1990), p.98.
3. R. Falcenberg, J. Grabmaier, G. Hoiler: Proccedings of the 6th Photovoltaic Solar Energy Conf., London, Great Britain, April 15-19 (1985), p.980.
4. A. Schoneker, L. Geerligs, A. Muller: Solid State Phenomena Vol. 95-96 (2004), p.149.
5. V. Kveder, W. Schroter, M. Seibt, A. Sattler: Solid State Phenomena Vol. 82-84 (2002), p.361.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献