Yield Impact of Backside Metal-Ion Contamination
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Published:2012-04
Issue:
Volume:187
Page:287-290
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Carey Stephen1,
Knotter D. Martin1,
Ooms Eric1,
Boersma Johannes1,
van der Sar Elfried1,
Cop Robbert1,
Gerritzen Wim1,
van Zadelhoff Hans1,
Bouma Henk1
Abstract
Small amounts (~1010 atms of Fe) of metal-ion contamination remains on local spots on the backside of the wafer. During a thermal process step, 30% of this contamination is transferred to the front side of the wafer where it causes in some specific cases substrate degradation. The source of the contamination is stainless-steel wafer pins that are used in wafer handling on for example litho tracks. This contamination is printed onto the backside wafer surface where two cleaning steps were not able to remove it. Figure 1. Wafer test: 3 clusters of devices failing due to the tripod signal.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference1 articles.
1. Gmelins Handbuch der Anorganische Chemie, 8th ed. Phosphor Teil C. (Verlag Chemie-GmbH, Weinheim, Germany, 1965) p.46.
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