Study of Radiation Damage in Diamond Film Implanted by B Ion

Abstract

The radiation damage and its distribution in the type-Ib diamond film implanted by B ion have been investigated by means of Raman scattering and X-ray diffraction spectra. It is of significance during the applications of diamond materials due to several phenomena related to B-doped diamond, such as the superconductivity, the conversion of p-type to n-type conductivity and the low resistivity. The Raman scatting spectra indicated that the radiation damage in implantation layer was various with implantation depth. The top layer was damaged badly and graphitized completely. There existed small damage in nether layer, which resulted in partly amorphous carbon. It was noted that the volume was expanded in diamond film implanted by B ion. By x-ray diffraction pattern, it was reckoned that the lattice parameter was enlarged in B-implanting diamond layer, which expanded the volume of diamond film.