Affiliation:
1. Zhejiang University of Technology
2. Zhejiang Industry and Trade Polytechnic
Abstract
The stress and strain in a growing sample are driving forces leading to the formation of self-assembled quantum dots in lattice-mismatched heteroepitaxy.The stress and strain distributions, as well as the dependence of the strain energy on the aspect ratio, of a dome self-assembled Ge/Si semiconductor quantum dot are investigated based on finite element method of anisotropic theory of elasticity. The free energy consisting of the strain energy and surface energy is defined, and used to study the equilibrium shape of the systems. The results are consistent with experiment observations.
Publisher
Trans Tech Publications, Ltd.
Reference29 articles.
1. S. Fafard, K. Hinzer and S. Raymond, Science, Vol. 274(1996), p.1350.
2. J. Phillips, K. Kamath and P. Bhattacharya, Appl. Phys. Lett, Vol. 72(1998), p. (2020).
3. S. Kim, H. Mohseni and M. Erdtmann, Appl. Phys. Lett, Vol. 73(1998), p.963.
4. W. M. Zhou and C. Y. Wang, Acta. Phys. Sin, Vol. 532004), p.4308(in chinese).
5. K. Brunner, Rep Prog Phys, Vol. 65(2002), p.27.