Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films-Reference-Cited by-同舟云学术

Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films

Published:2013-12 Issue: Volume:475-476 Page:1299-1302
ISSN:1662-7482
Container-title:Applied Mechanics and Materials
language:
Short-container-title:AMM

Author:

Cui Shan Lin¹,Gang Hong²,Li Zheng Nian²

Affiliation:

1. Liaoning Electric Power Company Limitted

2. Harbin Institute of Technology

Abstract

High-quality GaN films are deposited on diamond films using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) under the condition of the proper Trimethyl gallium (TMGa) flux. The influence of TMGa flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films with small surface roughness and high c-orientation are successfully achieved at the optimized flux. The most significant improvements in morphological and structural properties of GaN films are obtained by using a proper TMGa flux

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/AMM.475-476.1299.pdf

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