Affiliation:
1. Kunming University of Science and Technology
2. Yunnan Metallurgy Group Co.
Abstract
Numerical simulations of transport phenomena is one of the valid methods in investigation of crystal silicon growth by CVD for various types of reactors. The present review provides the key summary on the development of fluid dynamic simulations on polysilicon of CVD and hopefully aid in future improvement of this technology. In the solution of CVD reactor models for polysilicon production, the influence of the deposition process on temperature, the transport phenomena and the surface reactions have to be taken into account when discussing the silicon growth rate.
Publisher
Trans Tech Publications, Ltd.
Reference15 articles.
1. Zhang P, Wang W, Cheng G and Li J, Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System, Chinese Journal of Chemical Engineering. 19(2011) 1-9.
2. Hou Y.Q., Xie G., Tao D. P., Yu X. H., Tian L. and Yang N., Production Technology of Solar grade Polycrystalline Silicon, Material Review. 24(2010)31-34.
3. Johannes Bernreuter, The polysilicon market–perspectives on demand, supply and production technologies, Silicon for the Chemical and Solar Industry. 11(2012) 281–284.
4. Filtvedt W O, Javidi M, Holt A, et al. Development of fluidized bed reactors for silicon production, Solar Energy Materials and Solar Cells. 94(2010) 1980-(1995).
5. Filtvedt W O, Holt A, Ramachandran PA and Melaaen MC, Chemical vapor deposition of silicon from silane: Review of growth mechanisms and modeling/scaleup of fluidized bed reactors, Solar Energy Materials and Solar Cells. 107(2012) 188-200.
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