Optical and Structural Characterizations of GaN Nanostructures

Abstract

In this paper, we have grown high-quality wurtzite GaN nanowires (NWs) on polished <111> silicon (Si) either with or without gold (Au) as catalyst, by thermal evaporation using commercial GaN powder in an atmosphere of argon (Ar) gas. Optical and structural characterizations were performed using photoluminescence (PL), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and high resolution X-ray diffraction (HR-XRD). Structural characterizations indicate that the nanowires are of single-crystal hexagonal GaN. By using catalyst the growth location and diameters of the NWs can be controlled. The NWs on the Si are of higher density, and the compositional quality of the grown NWs on the Si substrate is of pure GaN as compare to the Au-coated substrate.