Realization of a Wideband Microwave Noise Filter Used Magnetic Multilayer Thin Films by Using Exchange Bais Stacks Structure

Abstract

The microwave magnetic dynamic properties of the [NiFe(40nm)/IrMn(15nm)]6/[NiFe(30nm)/IrMn(15nm)]7/[NiFe(20nm)/IrMn(15nm)]10 multi-stacks structure films, prepared by high vacuum DC magnetron sputtering deposition, have been investigated at the frequency range from 10 MHz to 6 GHz. By changing the thickness of the ferromagnetic (FM) NiFe layer in bottom [NiFe(t nm)/IrMn(15nm)]6 stack part, a tunable lower frequency range used magnetic multilayer can be realized. The influence of the NiFe layer thickness in bottom stack to static and dynamic magnetic properties were obtained and analyzed. Combining with the top [NiFe(30nm)/IrMn(15nm)]7/[NiFe(20nm)/IrMn(15nm)]10 two stacks used in the higher frequency, a kind of multi-stacks structure magnetic thin films were fabricated for the wideband microwave noise filter.