Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine Implantation
-
Published:2011-11
Issue:
Volume:383-390
Page:3178-3182
-
ISSN:1662-8985
-
Container-title:Advanced Materials Research
-
language:
-
Short-container-title:AMR
Author:
Chen Yung Yu1, Hsieh Chih Ren2, Chiu Fang Yu2
Affiliation:
1. Lunghwa University of Science and Technology 2. National Chiao Tung University
Abstract
Channel fluorine implantation (CFI) has been successfully integrated with silicon nitride contact etch stop layer (SiN CESL) to further improve the channel hot electron stress (CHES) and constant voltage stress (CVS) reliability of n-channel metal-oxide-semiconductor field-effect-transistor with HfO2/SiON gate stack. Although the improvement of transconductance, drain current and subthreshold swing due to the fluorine passivation is screened out by the effect of uniaxial tensile strain, the result clearly demonstrates that integrating the CFI process in the SiN CESL-strained device can further suppress the CHES- and CVS-induced threshold voltage shift.
Publisher
Trans Tech Publications, Ltd.
Subject
General Engineering
Reference8 articles.
1. M. Li, K.H. Yeo, Y.Y. Yeoh, S.D. Suk, K.H. Cho, D.W. Kim, D. Park and W.S. Lee, in: IEEE IEDM tech. dig., Washington, 2007, pp.899-902. 2. W. -C. Wu, T. -S. Chao, T. -H. Chiu, J. -C. Wang, C. -S. Lai, M. -W. Ma and W. -C. Lo: IEEE Electron Device Lett. Vol. 29 (2008), p.1340. 3. L. Kang, Y. Jeon, K. Onishi, B.H. Lee, W. -J. Qi, R. Nieh, S. Gopalan and J.C. Lee, in: IEEE Symp. VLSI Tech., Honolulu, 2000, pp.44-45. 4. Y. Kim, G. Gebara, M. Freiler, J. Barnett, D. Riley, J. Chen, K. Torres, J. Lim, B. Foran, F. Shaapur, A. Agarwal, P. Lysaght, G. Brown, C. Young, S. Borthakur, H. Li, B. Nguyen, P. Zeitzoff, G. Bersuker, D. Derro, R. Bergmann, R. Murto, A. Hou, H. Huff, E. Shero, C. Pomarede, M. Givens, M. Mazanec and C. Werkhoven, , in: IEEE IEDM tech. dig., Washington, 2001, p.2021-(2024). 5. H. -H. Tseng, P.J. Tobin, S. Kalpat, J.K. Schaeffer, M.E. Ramon, L.R.C. Fonseca, Z.X. Jiang, R.I. Hegde, D.H. Triyoso and S. Semavedam: IEEE Trans. Electron Devices Vol. 54 (2007), p.3267.
|
|