Affiliation:
1. Institute of Materials Research and Engineering
2. Institute of Material Research Engineering
Abstract
In this paper, we report a DFB laser diode with a buried SiO2 grating. Epitaxy lateral
overgrowth by metalorganic chemical vapour deposition (MOCVD) is conducted to grow the p-type
InP cladding layers in the nano-patterned dielectric grating template. The large refractive index
difference between SiO2 and InP results an index coupling coefficient κ of about 250 cm-1. The
fabricated DFB laser showed a side mode suppression ratio larger than 45 dB measured. The
technology developed can also be used for other applications that require high efficiency grating
structure.
Publisher
Trans Tech Publications, Ltd.