Affiliation:
1. Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology
2. Inner Mongolia University
3. Jilin University
Abstract
The CIGS thin films were prepared on ordinary soda lime glass substrates by pulsed laser deposition (PLD). The XRD and UV-visible spectrophotometer has been determined. The influence of different heat treatment temperature on crystal structure and optical properties has been studied. The results shows that heat treatment at 450°C, the films along the (112) plane preferential grow. The thin film’s structure is integrity, the film is in best crystallization conditions, band gap is 1.35eV and the film has a high visible light absorption efficiency.
Publisher
Trans Tech Publications, Ltd.