The Dislocation Density Distribution of Different Types of Doped InP Wafers

Abstract

It is of great significance to study on the dislocation density distribution of different types of doped indium phosphide (InP) crystal wafers for fabricating high-quality InP single crystal with low dislocation density. In the paper, a new etched pits density mapping (EPD mapping) measurement is introduced to measure the dislocation density distribution of the S-doped, Fe-doped and non-doped InP wafers pulled by high-pressure liquid encapsulated Czochralski (HP-LEC) technique. Test results show that in the three types of InP wafers， the S-doped InP wafer’s dislocation density is lowest and uniformity is best; the non-doped InP wafer’s dislocation density is maximum and uniformity is the worst; the Fe-doped InP wafer’s dislocation density and uniformity are between the S-doped and non-doped InP wafers. In the paper, the measurement results are analyzed in detail also from the faces of the doping and crystal growth process and thermodynamic mechanism. This study shows that in addition to traditional methods, using reasonable doping process can also effectively reduce the dislocation in the crystal, enhance the lattice strength and improve the uniformity of the InP single crystal.