Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition

Published:2011-08 Issue: Volume:306-307 Page:1133-1137
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Kuo Ting Wei¹,Kong Ling Min²,Feng Zhe Chuan¹,Liu Wei³,Chua Soo Jin³,Huang Ying Sheng⁴

Affiliation:

1. National Taiwan University

2. Zhejiang Ocean University

3. Institute of Materials Research and Engineering

4. National Taiwan University of Science and Technology

Abstract

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), were studied by time-resolved photoluminescence (TRPL) spectroscopic technique. Samples involved have similar basic structures of three QWs but different well-composition and barrier/well dimensions. TRPL results show that PL intensity and decay time increase with the number of QWs and the indium composition. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN MQW LED, with controlled the indium composition and QW numbers.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.306-307.1133.pdf

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