Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Synchrotron Radiation X-Ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by Chemical Vapor Deposition

Published:2011-08 Issue: Volume:306-307 Page:167-170
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Tu Yu Li¹,Huang Yan Hao¹,Kong Ling Min²,Lee Kung Yen¹,Jang Ling Yun³,Tin Chin Che⁴,Liu Chee Wee¹,Feng Zhe Chuan¹

Affiliation:

1. National Taiwan University

2. Zhejiang Ocean University

3. National Synchrotron Radiation Research Center

4. Auburn University

Abstract

Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.306-307.167.pdf

Reference15 articles.

1. J. A. Powell, P. Pirouz and W. J. Choyke, in: Semiconductor Interfaces, Microstructures and Devices: Properties and Applications, edited by Z. C. Feng, Institute of Physics Publishing, Bristol (1993).

2. Z. C. Feng: SiC Power Materials – Devices and Applications (Springer, Berlin 2004).

3. S. Nishino, J. A. Powell, H. A. Will: Appl. Phys. Lett. Vol. 42 (1983), p.460.

4. Z. C. Feng and J. H. Zhao: Silicon Carbide: Materials, Processings and Devices (Taylor & Francis Books Inc., New York 2003).

5. Z. C. Feng: SiC Power Materials–Devices and Applications (Springer, Berlin 2004).